PIN Diodes

The PIN diodes are epitaxial silicon. The PIN diodes for the GEC package are manufactured by Centronics. The performance of these PINs before irradiation is given below:

• responsivity ~ 0.45 microA/microW.
• Capacitance of PIN alone is about 0.5 pF. Capacitance to ground plane is about 2 pF (comes from lines 1.5mm long, 125 micron wide on 4 micron dielectric). Total capacitance is about 2.5 pF.
• rise/fall times are less than 1 ns.
• Full depletion voltage ~1V.

The responsivity of the PINs drops by about 1/3 with irradiation. More information on the radiation hardness of these PINs is available here.

Similar quality radiation-hard epitaxial Si PIN diodes have also been manufactured by Honeywell. Results on the radiation hardness of the Honeywell 3081 PINs is available here.