Module Specification
(Revised: 1995/9/21)

General:

  Module overlap (active area)			r/f=4 strips/side
						z=300µm

  Module tilt angle:				6-7 deg (TBD)


Mechanical tolerance:  

  Placement of wafers within a module:		r/f=±5µm, z=±25µm

  Placement of modules on support structure:	r=±250µm, f=±50µm, z=±100µm

  Survey of modules on the support structure:	r=±50µm, f=±25µm, z=±50µm
    (Warm/Cold?)

  Module and support structure stability:	r/f=±10µm, z=±100µm
	(chip power change by 20%?)
  
  Thermal cycles (10[1] cycles in -20~70[2] degC):	
						<±5µm deformation
    (50 cycles for sampling; 5 cycles every?)	no electrical change

  Electrical connectors:			survive 100 cycles
    (100 cycles for sampling; ? cycles  for every?)


Wirebonds:					breakability of 
						  individual bond


Operating temperature:

  Silicon operating temperature:		-10 degC
  
  Silicon temperature uniformity:		<5 degC


Design Constraints:  

  Radiation level (TP p179, 3yrs@10^33+7yrs@10^34)	
						2x10^14 1MeV-n/cm^2
						110 kGy
  Power disipation:

    Detector (at 30cm)				300µmx6cmx6cm

    Max leakage current of a wafer		0.66mA at 0 degC

    Max operating voltage			300V(?)

  Electronics (double-sides):

    Analog readout				1024chx3mW/ch=3.0W

    Binary readout				1536chx2mW/ch=3.0W


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Footnotes:

[1] 50 -> 10 cycles (1995/9/21)
[2] -10~40 degC -> -20~70 degC (1995/9/21)